ty n-channel mosfet (1) gate (2) source (3) drain ? 1 esd protection diode ? 2 body diode ? 2 ? 1 (3) (1) (2) 2.5v drive nch mosfet rtr025n05 z structure z dimensions (unit : mm) z features 1) low on-resistance. 2) built-in g-s protection diode. 3) small surface mount package (tsmt3). z application switching z packaging specifications z inner circuit package code taping basic ordering unit (pieces) rtr025n05 tl 3000 type z absolute maximum ratings (ta=25 c) ? 1 ? 1 ? 2 parameter v v dss symbol 45 v v gss 12 a i d 2.5 a i dp 10 a i s 0.8 a i sp 10 w p d 1.0 c tch 150 c tstg ? 55 to + 150 limits unit drain-source voltage gate-source voltage drain current total power dissipation channel temperature range of storage temperature continuous pulsed continuous pulsed ? 1 pw 10 s, duty cycle 1% ? 2 when mounted on a ceramic board source current (body diode) z thermal resistance c / w rth (ch-a) 125 parameter symbol limits unit channel to ambient ? when mounted on a ceramic board ? each lead has same dimensions (1) gate (2) source (3) drain tsmt3 0 ~ 0.1 0.16 0.85 1.0max 0.7 0.3 ~ 0.6 ( 2 ) ( 1 ) ( 3 ) 2.9 2.8 1.9 1.6 0.95 0.95 0.4 abbreviated symbol : pw product specification 4008-318-123 sales@twtysemi.com http://www.twtysemi.com 1 of 2
z electrical characteristics (ta=25 c) g ate-source leakage d rain-source breakdown voltage z ero gate voltage drain current g ate threshold voltage s tatic drain-source on-state r esistance f orward transfer admittance i nput capacitance o utput capacitance reverse transfer capacitance t urn-on delay time r ise time t urn-off delay time f all time t otal gate charge g ate-source charge g ate-drain charge ? pulsed parameter symbol i gss y fs min. ?? 10 av gs = 12v, v ds =0v v dd 25v typ. max. unit conditions v (br)dss 45 ?? vi d = 1ma, v gs =0v i dss ?? 1 av ds = 45v, v gs =0v v gs (th) 0.5 ? 1.5 v v ds = 10v, i d = 1ma ? 95 130 i d = 2.5a, v gs = 4.5v r ds (on) ? 100 140 m ? m ? m ? i d = 2.5a, v gs = 4v ? 125 175 i d = 2.5a, v gs = 2.5v 2.0 ?? sv ds = 10v, i d = 2.5a c iss ? 250 ? pf v ds = 10v c oss ? 60 30 ? pf v gs = 0v c rss ? 9 ? pf f=1mhz t d (on) ? 15 ? ns t r ? 20 ? ns t d (off) ? 14 ? ns t f ? 3.2 ? ns q g ? 0.9 ? nc q gs ? 0.7 ? nc v gs = 4.5v q gd ?? nc i d = 2.5a v dd 25 v i d = 1.2a v gs = 4.5v r l 20.8 ? r g =10 ? r l 10 ? r g =10 ? ? ? ? ? ? ? ? ? ? z body diode characteristics (source-drain) (ta=25 c) v sd ? pulsed ? ?? 1.2 v forward voltage i s = 2.5a, v gs =0v parameter symbol min. typ. max. unit conditions rtr025n05 product specification 4008-318-123 sales@twtysemi.com http://www.twtysemi.com 2 of 2
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